IXFR 44N50Q
IXFR 48N50Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 OUTLINE
g fs
V DS = 10 V; I D = I T
Notes 2, 3
30
42
S
C iss
7000
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 ? V DSS , I D = I T
R G = 1 ? (External), Notes 2, 3
960
230
33
22
75
10
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = I T
Notes 2, 3
190
40
86
nC
nC
nC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
R thJC
R thCK
0.15
0.40
K/W
K/W
Dim.
A
A 1
A 2
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
b
b 1
b 2
1.14 1.40
1.91 2.13
2.92 3.12
.045 .055
.075 .084
.115 .123
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
C
D
E
e
L
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
I S
I SM
V GS = 0 V
Repetitive; Note 1
48
192
A
A
L1
Q
R
3.81 4.32
5.59 6.20
4.32 4.83
.150 .170
.220 .244
.170 .190
V SD
t rr
Q RM
I RM
I F = I T , V GS = 0 V, Notes 2, 3
I F = 25A,-di/dt = 100 A/ μ s, V R = 100 V
1.0
10
1.5
250
V
ns
μ C
A
Note: 1. Pulse width limited by T JM
2. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
3. IXFR44N50Q: I T = 22 A
IXFR48N50Q: I T = 24 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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